Tool and method for modeling interposer rc couplings

ABSTRACT

A method comprises analyzing front side conductive patterns and back side conductive patterns on a semiconductor interposer using a machine implemented RC extraction tool, and outputting data representing a plurality of respective RC nodes from the RC extraction tool to a tangible persistent machine readable storage medium. A substrate mesh model of the semiconductor interposer is generated, having a plurality of substrate mesh nodes. Each substrate mesh node is connected to adjacent ones of the plurality of substrate mesh nodes by respective substrate impedance elements. A set of inputs to a timing analysis tool is formed. The plurality of RC nodes are connected to ones of the plurality of substrate mesh nodes of the substrate mesh model. The set of inputs is stored in a tangible machine readable storage medium.

FIELD

The disclosed subject matter relates to modeling and simulation toolsfor integrated circuits.

BACKGROUND

Integrated circuits (“ICs”) are incorporated into many electronicdevices. IC packaging has evolved, such that multiple ICs may bevertically stacked in so-called three-dimensional (“3D”) packages inorder to save horizontal area on a printed circuit board (“PCB”). Analternative packaging technique, referred to as a 2.5D package may usean interposer, which may be formed from a semiconductor material such assilicon, for coupling one or more dies to a PCB. A plurality of ICchips, which may be of heterogeneous technologies, are mounted on theinterposer. Connections among the various ICs are routed throughconductive patterns in the interposer. Interposers affect the operatingcharacteristics of the ICs that are bonded or otherwise coupled to theinterposer due to the resistance and capacitance (“RC”) of thesemiconductor substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram of a system including a semiconductor interposer.

FIGS. 2A-2B show a system and process for simulating frequency dependenteffects in an interposer.

FIG. 3 is a block diagram of a system for designing and analyzing an ICproduct.

FIG. 4A is a schematic diagram of a grounded substrate model generatedby an RC extraction tool.

FIG. 4B is a schematic diagram of a substrate mesh model.

FIG. 5 is an isometric diagram of the substrate mesh model of FIG. 4B.

FIGS. 6A-6D are schematic diagrams of the impedance elements in FIG. 4B.

FIGS. 7A and 7B are schematic diagrams of a model of a through siliconvia (TSV) aligned along the substrate mesh grid (FIG. 7A) or off thegrid line (FIG. 7B).

FIG. 8A is an example of a method of connecting the grounded substratemodel of FIG. 4A to the substrate mesh model of FIG. 4B.

FIG. 8B shows a detail of connecting the grounded substrate model to asubstrate mesh model having a different number of nodes.

FIG. 8C is a diagram of a calculation to combine nodes to improve runtime.

FIG. 9 is a diagram showing a model having two regions with differentnode densities.

FIG. 10 is a flow chart of a process performed by the substrate meshgeneration/insertion block of FIG. 3.

FIG. 11 is a flow chart of an alternative process performed by thesubstrate mesh generation/insertion block of FIG. 3.

DETAILED DESCRIPTION

This description of the exemplary embodiments is intended to be read inconnection with the accompanying drawings, which are to be consideredpart of the entire written description. In the description, relativeterms such as “lower,” “upper,” “horizontal,” “vertical,”, “above,”“below,” “up,” “down,” “top” and “bottom” as well as derivative thereof(e.g., “horizontally,” “downwardly,” “upwardly,” etc.) should beconstrued to refer to the orientation as then described or as shown inthe drawing under discussion. These relative terms are for convenienceof description and do not require that the apparatus be constructed oroperated in a particular orientation. Terms concerning attachments,coupling and the like, such as “connected” and “interconnected,” referto a relationship wherein structures are secured or attached to oneanother either directly or indirectly through intervening structures, aswell as both movable or rigid attachments or relationships, unlessexpressly described otherwise.

A tool and method are provided for modeling and simulating the frequencydependent capacitive couplings of the semiconductor interposer duringthe design stage.

For example, FIG. 1 illustrates one example of a 2.5-dimensional(“2.5D”) integrated circuit (“IC”) package 100 in which first and secondIC chips 102, 104 are coupled to an interposer 108, which is in turnmounted on a printed circuit board (“PCB”) 106. IC chips 102, 104 may bebonded to interposer 108 using small conductive bumps 110, which may bereferred to as a “microbump” or “g-bump”. Conductive bumps 111 may alsobe used to couple interposer 108 to PCB 106. Microbumps 110 connectingthe IC chips 102, 104 to interposer 108 may have different sizes andelectrical properties than the bumps 111 connecting the interposer 108to PCB 106.

Interposer 108 includes a semiconductor substrate 116 having front-sideand back-side interconnect layers 112, 114 formed on its front and backmajor surfaces, respectively. In some applications, substrate 116 is notgrounded and thus is electrically floating. Front- and back-sideinterconnect layers 112, 114 each may comprise a plurality ofinter-metal dielectric (IMD) layers, which include via level layers (V1,V2, etc.) and metal line level layers (e.g., M1, M2, etc.). As shown inFIG. 1, front-side interconnect structure 112 may include conductors118, 130 disposed in a first metal layer (i.e., M1) and a conductor 132disposed in a second metal layer (i.e., M2). Conductor 118 in front-sideinterconnect layer 112 may be electrically connected to metal conductor122 in back-side interconnect layer 114 by way of a through-silicon via(“TSV”) 124 that extends from front-side surface 126 of semiconductorsubstrate 116 to rear-side surface 128 of semiconductor substrate 116.

Front- and back-side interconnect layers 112, 114 may also includeconductors 130, 132, 134 that are not connected to each other. Althoughfront and rear conductors 130, 132, 134 are not conductively connectedto each other, electrical coupling (i.e., capacitive and/or inductivecoupling) between conductors 130, 132, and 134 occurs during operationof 2.5D IC 100. Electrical coupling also can occur between conductors inthe same side of semiconductor substrate 116. For example, electricalcoupling may occur between conductor 118 and 130, even if there is noconductive connection between them. Coupling may also occur betweenadjacent TSVs 124 that extend through semiconductor substrate 116. Theelectrical coupling between conductors in the interposer degrades theperformance of the 2.5D IC. Typical RC extraction tools and simulationsoftware based on the outputs of such RC extraction tools do not modelthe frequency dependent effects of such capacitive or inductivecouplings. Thus, the interposer of 2.5D ICs designed using such toolsthus have different frequency dependent characteristics than is intendedduring the design and simulation phase.

FIGS. 2A and 2B provide a high level flow chart of a timing analysismethod.

FIG. 2A shows the steps performed for model characterization (techfilecreation) 200 and the design infrastructure (techfile/library and designrule check) 210.

At block 202, the interconnect/transistor RC techfile characterizationis performed. Thus, the model accounts for the active device layers andBEOL interconnect layers of the dies 102, 104.

At block 204, the substrate RC (or RLC) model is characterized for theinterposer 108. This includes EM simulation, to compute R, C and Lvalues to be used in the substrate sub circuit model to represent thesubstrate. These R, L and C values are selected to match silicon testdata taken at several different frequencies in the relevant frequencyband with good correlation, as described below. The R, L and C values inthis step are based on a substrate region of unit dimensions (e.g., 1μm×1 μm). These values can then be made available for modelingsubstrates of any size.

At block 212, the IC designs of dies 102, 104 and cell information isstored in a tangible storage medium for use in modeling and fabricatingan IC.

At block 214, a set of default design rules 214 are provided for use bythe place and route tool.

At block 216, a technology file defines the material and geometryrelationships for the particular technology node being used in the dies102, 104.

At block 218, a substrate RC techfile is provided based on the substratecharacterization model 204. This file may be in the form of the circuitelements shown in any of FIGS. 6A-6D, for example. This RC technologyfile may be included as part of the original RC technology file and usedduring step 224 (below).

FIG. 2B shows the design and fabrication process adapted to include theinterposer substrate model.

At block 221, the place and route tool determines the locations of cellsand the routing of conductive lines and vias to form a preliminarylayout.

At step 222 design RC extraction is performed for an IC design whichincludes a semiconductor interposer 108. For purpose of RC extraction,the interposer model 400 used by the RC extraction tool treats thefloating substrate 116 as a grounded substrate 402 (as shown in FIG.4A). The machine implemented RC extraction tool 310 (FIG. 3) analyzesthe front side conductive patterns 118, 130, 132 (modeled by front sideelements 404) and back side conductive patterns 122, 134 (modeled bybackside elements 406) on the grounded substrate model of thesemiconductor interposer 402. The RC model 400 assumes respectivecapacitive elements 408 between ground and the conductive patterns 404,406 on the interposer 402. RC extraction tool 310 outputs datarepresenting a plurality of respective RC nodes 404, 406 to a tangiblepersistent machine readable storage medium 306 (FIG. 3).

Referring again to FIG. 2, at step 224, a substrate mesh model 410 (FIG.4B) of the semiconductor interposer is generated having a plurality ofsubstrate mesh nodes 414. The unit dimension values from block 204 arescaled based on the actual dimensions of the interposer substrate.Alternatively, in some embodiments, the grid size can be adjusted to aunit dimension if the model is small enough to run quickly on thecomputer platform used. Each substrate mesh node 414 is connected toadjacent ones of the plurality of substrate mesh nodes by respectivesubstrate impedance elements 412. In some embodiments, the nodes 414 liealong a rectangular grid having orthogonal major axes X, Y and Z (FIG.5) aligned with the axes of the substrate. The substrate impedanceelements are arranged on the sides of the rectangles defining the grid.Then a set of inputs to a timing analysis tool is formed from thegrounded substrate RC extraction model and the substrate mesh model. Theplurality of RC nodes (FIG. 4A) are connected to ones of the pluralityof substrate mesh nodes (FIG. 4B) of the substrate mesh model. The setof inputs is stored in a persistent, tangible machine readable storagemedium 326 (FIG. 3).

At step 226, a timing analysis of the semiconductor interposer isperformed using a machine implemented timing analysis tool 316 and theset of inputs, so as to simulate frequency dependent capacitivecouplings between the front side conductive patterns and backsideconductive patterns.

At step 228, if the timing analysis indicates that a design of thesemiconductor interposer satisfies a predetermined timing specification,the semiconductor interposer can be fabricated.

At step 230, the semiconductor interposer is incorporated into a 2.5Dpackage.

FIG. 3 is a block diagram of a system for modeling a semiconductorinterposer, according to one embodiment. System 300 includes anelectronic design automation (“EDA”) tool 302 such as “IC COMPILER”™,sold by Synopsis, Inc. of Mountain View, Calif., which may include aplace and route tool 304, such as “ZROUTE”™, also sold by Synopsis.Other EDA tools 302 may be used, such as the “VIRTUOSO” custom designplatform or the Cadence “ENCOUNTER”® digital IC design platform may beused, along with the “VIRTUOSO” chip assembly router 304, all sold byCadence Design Systems, Inc. of San Jose, Calif.

EDA tool 302 is a special purpose computer formed by retrieving storedprogram instructions from a non-transient computer readable storagemedium 306, 308 and executing the instructions on a general purposeprocessor (not shown). Examples of non-transient computer readablestorage mediums 306, 308 include, but are not limited to, read onlymemories (“ROMs”), random access memories (“RAMs”), flash memories, orthe like. Tangible, non-transient machine readable storage mediums 306,308 are configured to store data generated by the place and route tool304.

Router 304 is capable of receiving an identification of a plurality ofcells to be included in an integrated circuit (“IC”) or interposerlayout, including a list 320 of pairs of cells within the plurality ofcells to be connected to each other. Router 304 may be equipped with aset of default design rules 322 and tech file 324. In addition, an RCtech file 326 developed by process 200 (shown in FIG. 2) providesparameters for a floating interposer 108. As described below, thesephysical parameters are based on a frequency-dependent circuit modelthat approximates the semiconductor's response to an electromagneticwave.

EDA tool 302 also includes an RC extraction tool 310, as well as anelectromagnetic (“EM”) simulation tool 316. (EM tool is used duringcharacterization, and not in implementation. The resulting RC-netlist isfeed-in to STA tool.) RC extraction tool 310 is configured to perform RCtiming analysis of the circuit patterns of interposer 108 such that theRC timing analysis is performed based on the layout of the metalpatterns 118, 130, 132, 134 in the interconnect layers 112, 114, using agrounded substrate model. In some embodiments, the RC extraction outputfile is in Standard Parasitic Format (SPF). In other embodiments, the RCextraction output file is in another format, such as Detailed StandardParasitic Format (DSPF), Reduced Standard Parasitic Format (RSPF),Standard Parasitic Exchange Format (SPEF), or Synopsys Binary ParasiticFormat (SBPF).

A substrate mesh generation and insertion engine 312, as describedbelow, is included. The substrate mesh generation and insertion engine312 accepts as inputs the output file of the RC extraction engine 310.From this file, the location of the RC nodes is determined. A substratemesh model is generated, and combined with the RC node model output bythe RC extraction engine as described below. The combined model is thenoutput in the same format as the RC extraction engine (or the sameformat used by EM Simulator 316).

Referring again to FIG. 3, the 316 (STA simulator) receives the combinedmodel and performs a simulation, which can now account for the frequencydependent characteristics of the interposer substrate.

FIG. 5 is an isometric diagram of an embodiment of the substrate meshmodel of FIG. 4B. FIG. 5 is an example of an evenly spaced mesh havingregularly spaced nodes 414, connected by impedance elements 412. Becausethe interposer 108 does not have active devices, the impedance elementsof the interposer 108 can be represented in the substrate mesh modelwith good accuracy as substrate elements and TSV elements. The nodes 414and the substrate impedance elements 412 of the substrate mesh model 410are arranged on a three-dimensional rectangular grid having threeorthogonal axes, such that each substrate impedance element 412 islocated between two adjacent ones of the nodes 414. The impedanceelements 412 representing the substrate impedance may be any of thecircuits 412 a-412 d shown in FIGS. 6A-6D, for example.

FIG. 6A shows a an impedance element 412 a having a capacitor Csub inparallel with a path, where the path includes an inductor Lsub and aresistor Rsub connected in series.

FIG. 6B shows a an impedance element 412 b having a capacitor Csub inparallel with an inductor Lsub.

FIG. 6C shows a an impedance element 412 c having a capacitor Csub, aninductor Lsub and a resistor Rsub in three parallel paths.

FIG. 6D shows a an impedance element 412 d having a capacitor Csub inparallel with a resistor Rsub. In some embodiments, the elements 412 dhave a computational advantage, because of their compatibility with theRC nodes output by the RC extraction engine 310.

For simplicity, the impedance elements 412 a-412 d are generallyreferred to below as 412. For a regular grid with evenly spaced nodes,the multiplicity of impedance elements 412 have only a relatively smallnumber of values. Thus, for example, impedance elements 412 connectingtwo interior nodes 414 of the substrate mesh may all have the samevalues of Csub, Rsub and Lsub. If the grid mesh is not regular, theseRLC values are re-computed. During substrate characterization a RC orRLC-model is developed based on unit-dimension (e.g., 1 μm×1 μm). Duringsubstrate mesh creation, the real value for an interposer having aparticular geometry is computed by scaling the RC or RLC-value based onthe real dimensions of the interposer. The scaling is based on the ratioof dimensions used in the actual design and in characterization. Thus,if each cell of the interposer model will be 2 μm×2 μm, scaled valuesfor Rsub and Csub may be one half the values of the unit dimensionimpedance element.

Referring again to FIG. 5, in some embodiments, where the RC extractionengine generates RC nodes having a regular spacing, the substrate meshmodel 410 is generated to have the same regular spacing. For example,the substrate mesh nodes 414 may have the same X-Y (in-plane)coordinates as the RC nodes, but different out-of-plane coordinates.

In other embodiments, the RC extraction engine generates RC nodes havinga irregular spacing. For example, the density of RC nodes may be greaterin areas of greater active device density, or in areas of greater metalconductor density. In such cases, the substrate mesh model may begenerated to have the same irregular spacing as the RC nodes. Forexample, the substrate mesh nodes may have the same X-Y (in-plane)coordinates as the RC nodes, but different out-of-plane coordinates.

In other embodiments, the nodes of the substrate mesh model are notaligned with the RC nodes output by RC extraction engine 310. Forexample, the substrate mesh model can be configured so as to reducesimulation run time, based on the characteristics of the interposersubstrate being modeled. An example is discussed below with respect toFIGS. 7 and 11, where substrate mesh nodes are placed at locationscorresponding to interposer TSVs.

FIG. 7A is a schematic diagram of a portion of a substrate mesh model700 including a TSV 720. The substrate has at least onethrough-substrate via (TSV) extending from the front side of thesubstrate to the back side of the substrate. As shown in FIG. 7A, thegrid size of the substrate mesh 700 may be selected so that the TSVs 720are located along a grid line connecting the substrate mesh nodes 414.That is, the TSV 720 may be located at (or replaces) one of the gridnodes 414. The conductive (e.g., copper) material of TSV 720 and theliner (diffusion barrier) 722 surrounding the TSV 720 occupy space andthus reduce the volume of silicon substrate at the portion of thesubstrate mesh including the TSV 720. Thus, the four impedance elements712 surrounding the TSV node 720 have smaller values of Csub, and Rsubthan the impedance elements 412. If the model for impedance element 712includes an inductance Lsub, the value of Lsub for elements 712 candiffer from that used in elements 412. In some embodiments, thesubstrate mesh model 700 also includes capacitors 724 to represent theliner 722.

In other embodiments, the TSVs in the model are not located at theintersection of two grid lines. but may be in between grid lines, asshown in FIG. 7B. In the example, the substrate mesh 702 has TSV'slocated along a grid line, in between grid intersections. The impedanceelements 712 connecting the TSV to adjacent nodes of the grid line alongwhich it is located are adjusted accordingly.

In other embodiments (not shown), the TSVs may be located so as not tolie along any of the substrate mesh grid lines. This can be accommodatedby inserting two or four additional nodes in the grid between theexisting grid lines, so that the TSV lies along a segment connecting theadded nodes.

FIG. 8A is a schematic diagram showing the combination 420 of thegrounded substrate model 400 (FIG. 4A) from the RC extraction engine 310and the substrate mesh model 410 (FIG. 4B). The models 400, 410 arecombined by joining the capacitors 408 of the grounded substrate model400 to selected nodes 414 of the substrate mesh model 410. FIG. 8Afurther shows an example in which each of the RC nodes 404 has arespective corresponding node 414 of the substrate mesh model directlyunderlying the RC node 404, and each of the RC nodes 406 has arespective corresponding node 414 of the substrate mesh model directlyabove the RC node 406. Thus, there is a one-to-one correspondencebetween the RC nodes 404,406 and the nodes 414 on the front and backfaces of the substrate mesh model 410. The process of generating thesubstrate mesh model includes generating a respective substrate meshnode having the same in-plane (X-Y) coordinates as, and directlyunderlying, each respective RC node. The joining can be performed by wayof a netlist. Thus, the netlist entries for RC extraction nodescorresponding to capacitors 408 (FIG. 4A) are modified to be connectedto nodes 414 of the substrate mesh model (FIG. 4B), instead of ground.

FIG. 8B shows another example of a combined model 800 in which there isnot a one-to-one correspondence between the RC nodes 812, 814, 822, 824and the nodes 414 on the front and back faces of the substrate meshmodel 410. In FIG. 8B, the RC extraction model 400 may include RC nodes812 and 814 representing a first conductive pattern 810, and RC nodes822 and 824 representing a second conductive pattern 820.

For some of the RC nodes 812, 814, the substrate mesh model 410 isgenerated to include a respective substrate mesh node 414 adjacent toeach respective RC node 812, 814, and the step of forming the set ofinputs to the simulator 316 includes connecting each RC node 812, 814 toits respective substrate mesh node 414. These substrate mesh nodes maybe directly underlying (same X-Y in-plane coordinates), or offset from(different X-Y coordinates), their respective substrate mesh nodes. Thisallows the substrate mesh to be modeled with the same accuracy as theconductors 810, regardless of whether the X-Y coordinates of thecorresponding nodes are the same. In the RC extraction netlist definingthe model 400, the capacitor 813 (connected to node 812 of the RCextraction output) is modified so its bottom end is connected to one ofthe nodes 414 of the substrate mesh 410 directly underlying node 812.Similarly, the capacitor 815 (connected to node 814 of the RC extractionoutput) is modified so its bottom end is connected to one of the nodes414 of the substrate mesh 410 directly underlying node 814.

In the case of some of the RC nodes 822, 824, at least one or more ofthe substrate mesh nodes have different in-plane coordinates from any ofthe RC nodes, and do not directly underlie any RC node. In someembodiments, all of the substrate mesh nodes have different in-planecoordinates from any of the RC nodes, and none directly underlies any RCnode. FIG. 8B shows how one or more nodes 822, 824 of the RC extractionmodel 400 are connected to the same node 414 of the substrate mesh 410.The netlist identifying the RC nodes output by the RC extraction tool310 is modified, so that the capacitor 823 (connected to RC node 822)and the capacitor 825 (connected to RC node 824) both have their bottomends connected to the same node 414 of the substrate mesh. Thus, the RCextraction output nodes and the substrate mesh can be joined regardlessof whether the number of substrate mesh nodes is different from thenumber of RC extraction model nodes.

In some embodiments, some or all of the substrate mesh model nodes areoffset from (i.e., do not directly underlie) the RC nodes, and each RCnode is connected to the nearest nodes in the top face of the substratemesh model (based on Euclidean distance). In some embodiments, there arefewer nodes in the top face of the substrate mesh model than the numberof RC nodes, and each RC node is connected to the nearest nodes in thetop face of the substrate mesh model (based on Euclidean distance).Using distance to determine to which substrate mesh node each RC node isconnected provides a computationally simple criterion.

Although not shown in FIG. 8B, in some embodiments, two nodes of thesubstrate mesh model are connected to a single RC node from the RCextraction outputs. In general, it is advantageous to have a number ofnodes in the top face of the interposer substrate mesh model that isfewer than the number of RC nodes in the RC extraction outputs, in orderto reduce computation time. However, even if the number of substratemesh model nodes is fewer, it may be useful to connect a particular pairof substrate mesh model nodes to the same RC node (for example, in aregion of low RC node density).

Because there is no requirement for a one-to-one correspondence betweenthe RC nodes (FIG. 4A) and the nodes in the top face of the interposersubstrate mesh model (FIG. 4B), the nodes may be joined in a mannerwhich will balance accuracy and computation time.

In general, the accuracy of the substrate mesh model 410 is better whenthe number of nodes in the substrate mesh model is larger. Thecomputation time is generally better if the nodes of the number of nodesin the substrate mesh model 410 is smaller.

FIG. 8C shows a technique to improve runtime speed. Multiple metalRC-nodes can be connected to a single substrate mesh node or vice versa.For example, in FIG. 8C, the original capacitance value C0 from the RCextraction-tool is computed assuming the mesh RC-node n1 connects with anode n2 directly under it. Meanwhile, the substrate mesh model providesa node n3 at a another location offset from n2. The substrate RCextraction model provides the capacitance C2 between n2 andmesh node n3which is offset from n2. To connect n1 to node n3. the capacitance valueC1 between n1 and n3 is computed.

FIG. 9 shows an embodiment of a model 900 having a first region 905 inwhich the conductive metal patterns 902 of the front 112 and/or back 114interconnect layers of the silicon interposer 108 have a first density,and a second region 910 in which the metal patterns 902 have a seconddensity lower than the first density. Thus, the corresponding substratemesh model has a first portion 905 with a first node density, and asecond portion 910 with a second node density lower than the first nodedensity. The first portion 905 of the substrate mesh model substantiallycoincides with the first (higher node density) portion 905 of thesemiconductor interposer 108. The second (lower density) portion 910 ofthe substrate mesh model substantially coincides with the second portionof the semiconductor interposer 108.

In some embodiments, the nodes of the substrate mesh model 900 arearranged on a rectangular grid, and the step of generating a substratemesh model includes: generating a preliminary model having a uniformdensity of nodes 414; and deleting from the preliminary model a firstnode 911 (shown in phantom) of the substrate mesh, such that theplurality of RC nodes (corresponding to patterns 902) has no node in thelocation of the first node 911. In some embodiments, the model has noimpedance elements connecting the nodes 912 to each other (as indicatedby the dashed lines). If a node 911 and its impedance elements 914 aredeleted from the model, the RC or RLC parameters for the surroundingimpedance elements 412′ are updated. For example, in the example of FIG.9, the impedance elements 412′ surrounding the location of the deletednode 911 will have a resistance value Rsub that is less than theresistance value of the other impedance elements 412.

In some embodiments, the nodes of the substrate mesh model 900 arearranged on a rectangular grid, and a preliminary model having a uniformnode density is generated. At least a first node 911 (shown in phantom)is deleted from the preliminary model, such that four rectangles 914(having sides shown in phantom) defined by the first node and additionalnodes 912 adjacent to the first node do not underlie any front sideconductive pattern of the semiconductor interposer. In otherembodiments, any substrate mesh node 911 on the front or back face ofthe substrate mesh model, that is not within a threshold distance of anyof the RC nodes corresponding to patterns 902 is deleted, and noimpedance elements are placed at the location of the deleted node 911.

FIG. 10 is a flow chart of a first example of a process performed by thesubstrate mesh generation/insertion block 312. In some embodiments,block 312 is a special purpose computer formed by loading computerprogram code for executing the process of FIG. 10 into a tangible,machine readable storage medium accessible by a processor.

At step 1002, the locations of the RC nodes 404, 406 are input from theoutputs of the RC extraction tool 310.

At step 1004, a loop is performed for each RC node.

At step 1006, in one embodiment, the substrate mesh nodes 414corresponding to the RC nodes are generated at the same X-Y coordinatesas the RC nodes, directly below the front face nodes 404, or directlyabove the back face nodes 406. (In other embodiments, the substrate meshnodes can be created independently of the location and grid pitch of theRC-nodes, as discussed below).

At step 1008, additional nodes representing the TSVs are added to thesubstrate mesh.

At step 1010, a rectangular grid 410 is formed connecting the substratemesh nodes 414. Impedance elements 412 are generated between adjacentnodes. The resistance Rsub and capacitance Csub of the impedance element412 can be determined based on the interposer substrate material, thefrequency of interest, and the distance between the nodes in thesubstrate mesh model. The values to be used for a given interposermaterial can initially be determined through silicon testing at severalfrequencies, and calibration of a substrate mesh model against thesilicon data. For example, tests in a frequency band up to 2.5 GHz maybe performed in silicon for calibrating the substrate mesh model at avariety of frequencies.

At step 1012, each RC node is connected to the corresponding substratemesh node with the same X-Y coordinates.

The process of FIG. 10 automatically adjusts the density of thesubstrate mesh model to vary approximately with the density of the RCextraction nodes. This model can be used to emphasize accuracy.

FIG. 11 is a process performed by an alternative design of the substratemesh generation/insertion block 312.

At step 1102, the locations of the RC nodes 404, 406 are input from theoutputs of the RC extraction tool 310.

At step 1104, the locations of the TSVs are determined.

At step 1106, a uniform substrate mesh is generated. In one embodiment,the uniform substrate mesh has nodes at TSV locations. Thus, thegranularity of the substrate mesh model can be determined by the TSVspacing, as an alternative to using the granularity of the RC nodespacing. Also, the number of nodes between adjacent TSVs can beadjusted, to reduce simulation run time. In other embodiments, the TSVlocations are offset from the nodes of the substrate mesh, such as theconfiguration shown in FIG. 7B.

At step 1108, a rectangular grid 410 is formed connecting the substratemesh nodes 414. Impedance elements 412 are generated between adjacentnodes.

At step 1110, the density of the substrate mesh can optionally bereduced in areas where the RC node density is smaller, to improvesimulation run time. This can be accomplished by, for example, deletingany substrate mesh node 414 if all of the RC nodes 404, 406 are morethan a threshold distance from that substrate mesh node 414.Alternatively, a substrate mesh node 414 may be deleted if none of therectangles formed by nodes including a given node underlie an RC node.If a node is deleted from the model, then the impedance elements 412connected to that node are also deleted from the model. The remainingimpedance elements immediately surrounding the location of the deletednode may be adjusted to reflect the different length of semiconductormaterial represented by that impedance element.

At step 1112, each RC node is connected to the corresponding closestsubstrate mesh node 414.

The methods described herein permit modeling of the frequency dependenteffects of the silicon interposer, using existing EDA tools and formats,and the use of standard technology files

In some embodiments, a method comprise analyzing front side conductivepatterns and back side conductive patterns on a semiconductor interposerusing a machine implemented RC extraction tool, and outputting datarepresenting a plurality of respective RC nodes from the RC extractiontool to a tangible persistent machine readable storage medium. Asubstrate mesh model of the semiconductor interposer is generated,having a plurality of substrate mesh nodes. Each substrate mesh node isconnected to adjacent ones of the plurality of substrate mesh nodes byrespective substrate impedance elements. A set of inputs to a timinganalysis tool is formed. The plurality of RC nodes are connected to onesof the plurality of substrate mesh nodes of the substrate mesh model.The set of inputs is stored in a tangible machine readable storagemedium.

In some embodiments, a system comprises a processor-implemented RCextraction tool for analyzing front side conductive patterns and backside conductive patterns on a semiconductor interposer, and outputtingdata representing a plurality of respective RC nodes. Aprocessor-implemented substrate extraction tool is provided forgenerating a substrate mesh model of the semiconductor interposer havinga plurality of substrate mesh nodes. Each substrate mesh node isconnected to adjacent ones of the plurality of substrate mesh nodes byrespective substrate impedance elements. A tangible persistent machinereadable storage medium stores a set of inputs to a timing analysistool. The plurality of RC nodes are connected to ones of the pluralityof substrate mesh nodes of the substrate mesh model.

In some embodiments, a tangible persistent machine readable storagemedium has machine readable program instructions encoded therein. Theprogram instructions are executed by a processor. The processor analyzesfront side conductive patterns and back side conductive patterns on asemiconductor interposer using a machine implemented RC extraction tool,and outputs data representing a plurality of respective RC nodes fromthe RC extraction tool. The processor generates a substrate mesh modelof the semiconductor interposer having a plurality of substrate meshnodes. Each substrate mesh node is connected to adjacent ones of theplurality of substrate mesh nodes by respective substrate impedanceelements. The processor forms a set of inputs to a timing analysis tool.The plurality of RC nodes are connected to ones of the plurality ofsubstrate mesh nodes of the substrate mesh model. A tangible machinereadable storage medium stores the set of inputs.

The methods described herein may be at least partially embodied in theform of computer-implemented processes and apparatus for practicingthose processes. The disclosed methods may also be at least partiallyembodied in the form of tangible, non-transient machine readable storagemedia encoded with computer program code. The media may include, forexample, RAMs, ROMs, CD-ROMs, DVD-ROMs, BD-ROMs, hard disk drives, flashmemories, or any other non-transient machine-readable storage medium,wherein, when the computer program code is loaded into and executed by acomputer, the computer becomes an apparatus for practicing the method.The methods may also be at least partially embodied in the form of acomputer into which computer program code is loaded and/or executed,such that, when the computer program code is loaded into and executed bya computer, the computer becomes an apparatus for practicing themethods. When implemented on a general-purpose processor, the computerprogram code segments configure the processor to create specific logiccircuits. The methods may alternatively be at least partially embodiedin a digital signal processor formed of application specific integratedcircuits for performing the methods.

Although the subject matter has been described in terms of exemplaryembodiments, it is not limited thereto. Rather, the appended claimsshould be construed broadly, to include other variants and embodiments,which may be made by those skilled in the art.

1. A method comprising: analyzing front side conductive patterns andback side conductive patterns on a semiconductor interposer using amachine implemented RC extraction tool, and outputting data representinga plurality of respective RC nodes from the RC extraction tool to atangible persistent machine readable storage medium; generating asubstrate mesh model of the semiconductor interposer having a pluralityof substrate mesh nodes, wherein each substrate mesh node is connectedto adjacent ones of the plurality of substrate mesh nodes by respectivesubstrate impedance elements; forming a set of inputs to a timinganalysis tool, wherein the plurality of RC nodes are connected to onesof the plurality of substrate mesh nodes of the substrate mesh model;and storing the set of inputs in a tangible machine readable storagemedium.
 2. The method of claim 1, further comprising: performing atiming analysis of the semiconductor interposer using a machineimplemented timing analysis tool and the set of inputs, so as tosimulate frequency dependent capacitive couplings between the front sideconductive patterns and backside conductive patterns.
 3. The method ofclaim 1, wherein the nodes and the substrate impedance elements of thesubstrate mesh model are arranged on a three-dimensional rectangulargrid having three orthogonal axes, such that each substrate impedanceelement is located between two adjacent ones of the nodes.
 4. The methodof claim 1, wherein each substrate impedance element includes aresistance and a capacitance in parallel to each other.
 5. The method ofclaim 4, wherein each substrate impedance element further includes aninductance in parallel with the capacitance.
 6. The method of claim 4,wherein: the substrate has at least one through-substrate via (TSV)extending from the front side of the substrate to the back side of thesubstrate, the TSV is located at one of the substrate mesh nodes, andthe substrate impedance elements adjacent to the TSV have differentresistance and capacitance values than other ones of the plurality ofsubstrate impedance elements that are not adjacent to the TSV.
 7. Themethod of claim 1, wherein the substrate mesh model is generated toinclude a respective substrate mesh node adjacent to each respective RCnode, and the step of forming the set of inputs includes connecting eachRC node to its respective substrate mesh node.
 8. The method of claim 7,wherein the step of generating the substrate mesh model includes:generating a respective substrate mesh node having the same in-planecoordinates as, and directly underlying, each respective RC node.
 9. Themethod of claim 1, wherein the substrate mesh model is generated toinclude a respective substrate mesh node adjacent to each respective RCnode, and the step of forming the set of inputs includes connecting eachRC node to the substrate mesh node closest to that RC node, based onEuclidean distance.
 10. The method of claim 9, wherein at least two ofthe RC nodes are connected to the same one of the substrate mesh nodes.11. The method of claim 1, wherein the substrate mesh model has a firstportion with a first node density, and a second portion with a secondnode density lower than the first node density.
 12. The method of claim11, wherein: the semiconductor interposer has a first portion, in whichone of the group consisting of the front side conductive patterns andthe back side conductive patterns have a first density, and a secondportion, in which the one of the front side conductive patterns and theback side conductive patterns have a second density lower than the firstdensity, and the second portion of the substrate mesh modelsubstantially coincides with the second portion of the semiconductorinterposer.
 13. The method of claim 12, wherein the nodes of thesubstrate mesh model are arranged on a rectangular grid, and the step ofgenerating a substrate mesh model includes: generating a preliminarymodel having a uniform node density; and deleting from the preliminarymodel a first node of the substrate mesh, such that all of the pluralityof RC nodes is more than a threshold distance from the location of thefirst node.
 14. The method of claim 12, wherein the nodes of thesubstrate mesh model are arranged on a rectangular grid, and the step ofgenerating a substrate mesh model includes: generating a preliminarymodel having a uniform node density; and deleting from the preliminarymodel a first node, such that four rectangles defined by the first nodeand additional nodes adjacent to the first node do not underlie anyfront side conductive pattern of the semiconductor interposer.
 15. Themethod of claim 1, further comprising performing a timing analysis ofthe semiconductor interposer using a machine implemented timing analysistool and the set of inputs, so as to simulate frequency dependentcapacitive couplings between the front side conductive patterns andbackside conductive patterns; and fabricating the semiconductorinterposer if the timing analysis indicates that a design of thesemiconductor interposer satisfies a predetermined timing specification;and incorporating the semiconductor interposer into a 2.5D package. 16.A system comprising: a processor-implemented RC extraction tool foranalyzing front side conductive patterns and back side conductivepatterns on a semiconductor interposer, and outputting data representinga plurality of respective RC nodes; a processor-implemented substrateextraction tool for generating a substrate mesh model of thesemiconductor interposer having a plurality of substrate mesh nodes,wherein each substrate mesh node is connected to adjacent ones of theplurality of substrate mesh nodes by respective substrate impedanceelements; and a tangible persistent machine readable storage medium forstoring a set of inputs to a timing analysis tool, wherein the pluralityof RC nodes are connected to ones of the plurality of substrate meshnodes of the substrate mesh model.
 17. The system of claim 16, furthercomprising: a machine implemented timing analysis tool for performing atiming analysis of the semiconductor interposer using the set of inputs,so as to simulate frequency dependent capacitive couplings between thefront side conductive patterns and backside conductive patterns.
 18. Thesystem of claim 17, wherein: the nodes and the substrate impedanceelements of the substrate mesh model are arranged on a three-dimensionalrectangular grid having three orthogonal axes, such that each substrateimpedance element is located between two adjacent ones of the nodes,each substrate impedance element including a resistance and acapacitance in parallel to each other; the substrate has at least onethrough-substrate via (TSV) extending from the front side of thesubstrate to the back side of the substrate, the TSV being located atone of the substrate mesh nodes, and the substrate impedance elementsadjacent to the TSV have different resistance and capacitance valuesthan other ones of the plurality of substrate impedance elements thatare not adjacent to the TSV; the substrate mesh model is generated toinclude a respective substrate mesh node adjacent to each respective RCnode, the step of forming the set of inputs includes connecting each RCnode to its respective substrate mesh node; and the step of generatingthe substrate mesh model includes generating a respective substrate meshnode having the same in-plane coordinates as, and directly underlying,each respective RC node.
 19. A tangible persistent machine readablestorage medium having machine readable program instructions encodedtherein, such that when the program instructions are executed by aprocessor, the processor performs a method comprising: analyzing frontside conductive patterns and back side conductive patterns on asemiconductor interposer using a machine implemented RC extraction tool,and outputting data representing a plurality of respective RC nodes fromthe RC extraction tool; generating a substrate mesh model of thesemiconductor interposer having a plurality of substrate mesh nodes,wherein each substrate mesh node is connected to adjacent ones of theplurality of substrate mesh nodes by respective substrate impedanceelements; forming a set of inputs to a timing analysis tool, wherein theplurality of RC nodes are connected to ones of the plurality ofsubstrate mesh nodes of the substrate mesh model; and storing the set ofinputs in a tangible machine readable storage medium.
 20. The storagemedium of claim 19, wherein the method further comprises: performing atiming analysis of the semiconductor interposer using a machineimplemented timing analysis tool and the set of inputs, so as tosimulate frequency dependent capacitive couplings between the front sideconductive patterns and backside conductive patterns.
 21. The storagemedium of claim 19, wherein the nodes and the substrate impedanceelements of the substrate mesh model are arranged on a three-dimensionalrectangular grid having three orthogonal axes, such that each substrateimpedance element is located between two adjacent ones of the nodes.